any changing of specification will not be informed individual MMBTA92W pnp silicon general purpose transistor n n n n r o h s c o m p l i a n t p r o d u c t p o w e r d i s s i p a t i o n & c o l l e c t o r c u r r e n t p c m : 0 . 2 w i c m : - 0 . 3 a h i g h v o l t a g e v ( b r ) : - 3 0 0 v f e a t u r e s http://www.secosgmbh.com elektronische bauelemente electrical characteristics tamb=25 unless otherwise specified parameter symbol test conditions min max unit collector- base breakdown voltage v (br)cbo ic= -100ua i e =0 -300 v collector- emitter brea kdown voltage v (br)ceo ic= -1 m a i b =0 -300 v emitter-base breakdown voltage v (br)ebo i e =-100 x a i c =0 -5 v collector cut- off current i cbo v cb =-200 v , i e =0 -0.25 0 a emitter cut- off current i ebo v eb =-5v, i c =0 -0.1 0 a h fe
1 v ce = -10v, i c =-1ma 60 h fe
2 v ce = -10v, i c =-10ma 100 200 dc current gain h fe
3 v ce =-10v, i c =-30ma 60 collector- emitter saturation voltage v ce (sat) i c =-20 ma, i b = -2m a -0.2 v base- emitter saturation voltage v be (sat) i c = -20 ma, i b =-2ma -0.9 v transition frequency f t v ce =-20v, i c =-10ma f= 30mhz 50 mhz device marking MMBTA92W=k3r 01-jun-2002 rev. a page 1 of 2 2. base 1.emitter 3. collector k j c h l a b s g v dim min max a 1.800 2.200 b 1.150 1.350 c 0.800 1.000 d 0.300 0.400 g 1.200 1.400 h 0.000 0.100 j 0.100 0.250 k 0.350 0.500 l 0.590 0.720 s 2.000 2.400 v 0.280 0.420 all dimension in mm sot-323 d top view
any changing of specification will not be informed individual MMBTA92W pnp silicon general purpose transistor http://www.secosgmbh.com elektronische bauelemente MMBTA92W figure 1. dc current gain figure 2. capacitance i c , collector current (ma) 150 90 70 50 30 10 t j = 25 c v ce = 20 vdc f = 20 mhz f, current?gain bandwidth (mhz) t 1 fi 3. cnt ? ? 130 21 c, capacitance (pf) v r , reverse voltage (volts) 0.1 100 0.1 10 1.0 10 1000 c ib @ 1mhz 100 1.0 c cb @ 1mhz i c , collector current (ma) v, voltage (volts) 1.4 0.0 1.2 1.0 0.8 0.6 0.4 0.2 100 10 0.1 1.0 110 3579 19 17 15 13 11 v be(on) @ 25 c, v ce = 10 v v ce(sat) @ 25 c, i c /i b = 10 v be(sat) @ 25 c, i c /i b = 10 v ce(sat) @ 125 c, i c /i b = 10 v ce(sat) @ ?55 c, i c /i b = 10 v be(sat) @ 125 c, i c /i b = 10 v be(sat) @ ?55 c, i c /i b = 10 v be(on) @ 125 c, v ce = 10 v v be(on) @ ?55 c, v ce = 10 v fi 4. on votas i c , collector current (ma) 300 0.1 1.0 10 250 200 150 0 h fe , dc current gain t j = +125 c 25 c ?55 c v ce = 10 vdc 100 50 100 01jn2002 r. a pa 2 of 2
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